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PD - 91258D
HEXFET(R) Power MOSFET
l l l l l l l
IRLML2803
VDSS = 30V
Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching
D
G S
RDS(on) = 0.25
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Micro3
Absolute Maximum Ratings
Parameter
I D @ TA = 25C I D @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
1.2 0.93 7.3 540 4.3 20 5.0 -55 to + 150
Units
A mW
mW/C
V V/ns C
Thermal Resistance
RJA Maximum Junction-to-Ambient
Parameter
Typ.
Max.
230
Units
C/W
4/28/03
IRLML2803
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) g fs IDSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss
Min. 30 1.0 0.87
Typ. 0.029 3.3 0.48 1.1 3.9 4.0 9.0 1.7 85 34 15
Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.25 VGS = 10V, ID = 0.91A 0.40 VGS = 4.5V, ID = 0.46A V VDS = VGS, ID = 250A S VDS = 10V, ID = 0.46A 1.0 VDS = 24V, VGS = 0V A 25 VDS = 24V, VGS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 5.0 ID = 0.91A 0.72 nC VDS = 24V 1.7 VGS = 10V, See Fig. 6 and 9 VDD = 15V ID = 0.91A ns RG = 6.2 RD = 16, See Fig. 10 VGS = 0V pF VDS = 25V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 26 22 0.54 7.3 1.2 40 32 V ns nC A
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 0.91A, VGS = 0V TJ = 25C, IF = 0.91A di/dt = 100A/s
D
G S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 5sec.
ISD 0.91A, di/dt 120A/s, VDD V(BR)DSS,
TJ 150C
IRLML2803
10
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
10
I D , Drain-to-Source Current (A)
1
I D, Drain-to-Source Current (A)
VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP
1
3.0V
3.0V 20s PULSE WIDTH TJ = 25C A
0.1 1 10
0.1
0.1 0.1 1
20s PULSE WIDTH TJ = 150C A
10
V DS , Drain-to-Source Voltage (V)
V DS Drain-to-Source Voltage (V) ,
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
I D , Drain-to-Source Current (A)
TJ = 25C TJ = 150C
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 0.91A
1.5
1
1.0
0.5
0.1 3.0
V DS = 10V 20s PULSE WIDTH
3.5 4.0 4.5 5.0 5.5 6.0 6.5
A
0.0 -60 -40 -20 0 20 40 60 80
VGS = 10V
100 120 140 160
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRLML2803
160 140 120 100
C, Capacitance (pF)
Ciss
Coss
80 60 40 20 0 1 10 100
V GS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
20
I D = 0.91A V DS = 24V V DS = 15V
16
12
8
Crss
4
A
0 0.0
FOR TEST CIRCUIT SEE FIGURE 9
1.0 2.0 3.0 4.0 5.0
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
TJ = 150C
I D , Drain Current (A)
10 10s
1
TJ = 25C
100s 1 1ms
0.1 0.4 0.6 0.8 1.0
VGS = 0V
1.2
A
0.1 1
TA = 25C TJ = 150C Single Pulse
10
10ms
A
100
1.4
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRLML2803
QG
V DS VGS
RD
10V
VG
QGS
QGD
RG 10V
D.U.T.
+
- VDD
Charge
Pulse Width 1 s Duty Factor 0.1 %
Fig 9a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
Fig 10a. Switching Time Test Circuit
VDS
50K 12V .2F .3F
90%
D.U.T. VGS
3mA
+ V - DS
10% VGS
td(on)
IG ID
tr
t d(off)
tf
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
1000
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50 0.20 0.10 0.05
10 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100
1
0.1 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRLML2803
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 12. For N-Channel HEXFETS
IRLML2803
Package Outline
SOT-23 Outline Dimensions are shown in millimeters (inches)
D -B3
LEAD ASSIGNMENTS 1 - GATE 2 - SOURCE 3 - DRAIN
H 2 0.20 ( .008 ) M AM
DIM A A1 B C D e e1 E
INCHES MIN .032 .001 .015 .004 .105 MAX .044 .004 .021 .006 .120
MILLIMETERS MIN 0.82 0.02 0.38 0.10 2.67 MAX 1.11 0.10 0.54 0.15 3.05
3
E -A-
3 1
.0750 BASIC .0375 BASIC .047 .083 .005 0 .055 .098 .010 8
1.90 BASIC 0.95 BASIC 1.20 2.10 0.13 0 1.40 2.50 0.25 8
e e1 0.008 (.003) L 3X C 3X
H L A
MINIMUM RECOMMENDED FOOTPRINT -CB 3X 0.10 (.004) M A1 C AS B S 0.80 ( .031 ) 3X 0.90 ( .035 ) 3X 2.00 ( .079 )
NOTES: 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
0.95 ( .037 ) 2X
IRLML2803
SOT-23
Part Marking Information
Notes : T his part marking information applies to devices produced before 02/26/2001
EXAMPLE: T HIS IS AN IRLML6302 WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR PART NUMBER 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D
DATE CODE
PART NUMBER CODE REFERENCE: 1A = 1B = 1C = 1D = 1E = 1F = 1G = 1H = IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203
24 25 26
X Y Z
WW = (27-52) IF PRECEDED BY A LETT ER YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D
DAT E CODE EXAMPLES: YWW = 9503 = 5C YWW = 9532 = EF
50 51 52
X Y Z
Notes : T his part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECE DED BY LAS T DIGIT OF CALENDAR YEAR Y = YEAR W = WEEK YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D
PART NUMBER
LOT CODE
PART NUMBER CODE REFERENCE: A= B= C= D= E= F= G= H= IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203
24 25 26
X Y Z
W = (27-52) IF PRECEDED BY A LETTER YEAR 2001 2002 2003 1994 1995 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D
50 51 52
X Y Z
IRLML2803
Tape & Reel Information
SOT-23 Dimensions are shown in millimeters (inches)
2.05 ( .080 ) 1.95 ( .077 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 1.32 ( .051 ) 1.12 ( .045 )
TR
3.55 ( .139 ) 3.45 ( .136 )
8.3 ( .326 ) 7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 ) 3.9 ( .154 )
1.1 ( .043 ) 0.9 ( .036 )
0.35 ( .013 ) 0.25 ( .010 )
178.00 ( 7.008 ) MAX.
9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/03

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